IRF640PBF
المواصفات
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
70 nC @ 10 V
Rds On (Max) @ Id, Vgs:
180mOhm @ 11A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Product Status:
Active
سعة الإدخال (كيبك) (الحد الأقصى) @ Vds:
1300 بيكو فاراد عند 25 فولت
Mounting Type:
Through Hole
السلسلة:
-
Supplier Device Package:
TO-220AB
مفر:
(فيشاي سليكونيكس)
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
تبديد الطاقة (الحد الأقصى):
125 واط (ح)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRF640
مقدمة
القناة الشمالية 200 V 18A (Tc) 125W (Tc) من خلال الثقب TO-220AB
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أرسل RFQ
الأسهم:
الـ MOQ: