SI2302DDS-T1-GE3
المواصفات
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
5.5 nC @ 4.5 V
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
TrenchFET®
Vgs (Max):
±8V
Vgs(th) (Max) @ Id:
850mV @ 250µA
Supplier Device Package:
SOT-23-3 (TO-236)
Rds On (Max) @ Id, Vgs:
57mOhm @ 3.6A, 4.5V
مفر:
(فيشاي سليكونيكس)
Operating Temperature:
-55°C ~ 150°C (TJ)
نوع FET:
قناة N
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
تبديد الطاقة (الحد الأقصى):
710 ميجاوات (تا)
Package / Case:
TO-236-3, SC-59, SOT-23-3
استنزاف إلى مصدر الجهد (Vdss):
20 فولت
Current - Continuous Drain (Id) @ 25°C:
2.9A (Tj)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI2302
مقدمة
القناة الشمالية 20 فولت 2.9A (Tj) 710mW (Ta) سطح الجبل SOT-23-3 (TO-236)
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صورة | جزء # | الوصف | |
---|---|---|---|
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2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
|
|
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SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
|
|
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SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
|
|
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SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
![]() |
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
|
|
![]() |
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
![]() |
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
![]() |
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
![]() |
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
![]() |
الـ SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
أرسل RFQ
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الـ MOQ: