SI4497DY-T1-GE3
المواصفات
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
الحزمة / الحقيبة:
8-SOIC (0.154، 3.90mm العرض)
Gate Charge (Qg) (Max) @ Vgs:
285 nC @ 10 V
Rds On (الحد الأقصى) @ Id، Vgs:
3.3 مللي أوم عند 20 أمبير، 10 فولت
FET Type:
P-Channel
محرك الجهد (Max Rds On ، Min Rds On):
4.5 فولت ، 10 فولت
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
استنزاف إلى مصدر الجهد (Vdss):
30 فولت
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
9685 pF @ 15 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
8-SOIC
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
36A (Tc)
Power Dissipation (Max):
3.5W (Ta), 7.8W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI4497
مقدمة
قناة P 30 V 36A (Tc) 3.5W (Ta) ، 7.8W (Tc) سطح الصعود 8-SOIC
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صورة | جزء # | الوصف | |
---|---|---|---|
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2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
|
|
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SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
|
|
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SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
|
|
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SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
![]() |
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
|
|
![]() |
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
![]() |
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
![]() |
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
![]() |
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
![]() |
الـ SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
أرسل RFQ
الأسهم:
الـ MOQ: