IRF9520PBF
المواصفات
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
18 nC @ 10 V
Rds On (Max) @ Id, Vgs:
600mOhm @ 4.1A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
100 V
Vgs (ماكس):
± 20 فولت
Product Status:
Active
سعة الإدخال (كيبك) (الحد الأقصى) @ Vds:
390 بيكو فاراد @ 25 فولت
Mounting Type:
Through Hole
السلسلة:
-
Supplier Device Package:
TO-220AB
مفر:
(فيشاي سليكونيكس)
Current - Continuous Drain (Id) @ 25°C:
6.8A (Tc)
Power Dissipation (Max):
60W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRF9520
مقدمة
قناة P 100 V 6.8A (Tc) 60W (Tc) من خلال الثقب إلى 220AB
منتجات ذات صلة

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MOSFET N-CH 75V 28A PPAK SO-8

SI7157DP-T1-GE3
MOSFET P-CH 20V 60A PPAK SO-8

IRFP21N60LPBF
MOSFET N-CH 600V 21A TO247-3

SIR880ADP-T1-GE3
MOSFET N-CH 80V 60A PPAK SO-8

SIR873DP-T1-GE3
MOSFET P-CH 150V 37A PPAK SO-8

SIJ478DP-T1-GE3
MOSFET N-CH 80V 60A PPAK SO-8

SUD50N04-8M8P-4GE3
MOSFET N-CH 40V 14A/50A TO252

الـ SISA72DN-T1-GE3
MOSFET N-CH 40V 60A PPAK1212-8
صورة | جزء # | الوصف | |
---|---|---|---|
![]() |
2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
|
|
![]() |
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
|
|
![]() |
SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
|
|
![]() |
SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
![]() |
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
|
|
![]() |
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
![]() |
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
![]() |
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
![]() |
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
![]() |
الـ SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
أرسل RFQ
الأسهم:
الـ MOQ: