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SI2305CDS-T1-GE3

الصانع:
(فيشاي سليكونيكس)
الوصف:
MOSFET P-CH 8V 5.8A SOT23-3
الفئة:
منتجات أشباه الموصلات المنفصلة
المواصفات
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
30 nC @ 8 V
Rds On (Max) @ Id, Vgs:
35mOhm @ 4.4A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
8 V
Vgs (Max):
±8V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
960 pF @ 4 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
SOT-23-3 (TO-236)
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
5.8A (Tc)
Power Dissipation (Max):
960mW (Ta), 1.7W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI2305
مقدمة
قناة P 8 فولت 5.8A (Tc) 960mW (Ta) ، 1.7W (Tc) سطح الصعود SOT-23-3 (TO-236)
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