DMN30H4D0LFDE-7
المواصفات
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
ميزة FET:
-
Vgs(th) (Max) @ Id:
2.8V @ 250µA
درجة حرارة العمل:
-55 درجة مئوية ~ 150 درجة مئوية (TJ)
Package / Case:
6-PowerUDFN
بوابة المسؤول (Qg) (الحد الأقصى) @ Vgs:
7.6 نانو سي @ 10 فولت
Rds On (Max) @ Id, Vgs:
4Ohm @ 300mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.7V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
300 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
187.3 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
U-DFN2020-6 (Type E)
Mfr:
Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C:
550mA (Ta)
Power Dissipation (Max):
630mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMN30
مقدمة
القناة الشمالية 300 فولت 550mA (Ta) 630mW (Ta) سطح U-DFN2020-6 (النوع E)
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