(PSMN0R9-30YLDX)
المواصفات
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.2V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-1023, 4-LFPAK
Gate Charge (Qg) (Max) @ Vgs:
109 nC @ 10 V
Rds On (الحد الأقصى) @ Id، Vgs:
0.87 مللي أوم عند 25 أمبير، 10 فولت
FET Type:
N-Channel
محرك الجهد (Max Rds On ، Min Rds On):
4.5 فولت ، 10 فولت
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
استنزاف إلى مصدر الجهد (Vdss):
30 فولت
Vgs (Max):
±20V
حالة المنتج:
نشط
Input Capacitance (Ciss) (Max) @ Vds:
7668 pF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
LFPAK56; Power-SO8
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
300A (Tc)
Power Dissipation (Max):
291W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PSMN0R9
مقدمة
قناة N 30 V 300A (Tc) 291W سطح سطح LFPAK56 ؛ الطاقة SO8
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صورة | جزء # | الوصف | |
---|---|---|---|
![]() |
BUK7Y22-100EX |
MOSFET N-CH 100V 49A LFPAK56
|
|
![]() |
PMV27UPEAR |
MOSFET P-CH 20V 4.5A TO236AB
|
|
![]() |
PSMN8R7-100YSFX |
PSMN8R7-100YSF/SOT669/LFPAK
|
|
![]() |
BUK7Y7R6-40EX |
MOSFET N-CH 40V 79A LFPAK56
|
|
![]() |
BUK9M120-100EX |
MOSFET N-CH 100V 11.5A LFPAK33
|
|
![]() |
PSMN3R7-100BSEJ |
MOSFET N-CH 100V 120A D2PAK
|
|
![]() |
PSMN2R0-30PL،127 |
MOSFET N-CH 30V 100A TO220AB
|
|
![]() |
BUK7Y7R0-40HX |
MOSFET N-CH 40V 68A LFPAK56
|
|
![]() |
BUK7M10-40EX |
MOSFET N-CH 40V 56A LFPAK33
|
|
![]() |
BUK9Y65-100E،115 |
MOSFET N-CH 100V 19A LFPAK56
|
أرسل RFQ
الأسهم:
الـ MOQ: